PART |
Description |
Maker |
IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|47SMD
|
IXYS, Corp.
|
OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展|5A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区 TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五(巴西)国际消费电子展|9A一(c)|园区
|
Electronic Theatre Controls, Inc. OKI SEMICONDUCTOR CO., LTD.
|
IRGC49B120UB |
1200 V, N-CHANNEL IGBT TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|芯片 IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084 30V N-Channel PowerTrench MOSFET
|
|
CT20AS8 |
TRANSISTOR | IGBT | N-CHAN | 450V V(BR)CES | 130A I(C) | TO-252 晶体管| IGBT的|正陈| 450V五(巴西)国际消费电子展| 130A条一(c)|52
|
Mitsubishi Electric, Corp.
|
OM6556SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五(巴西)国际消费电子展| 21A条(c)的|园区
|
Mitsubishi Electric, Corp.
|
HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五(巴西)国际消费电子展| 75A条一(c)|米:HL093HD5.6
|
Infineon Technologies AG
|
IXGH24N60C |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|采用TO - 247AD
|
IXYS, Corp.
|